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TGF2979-SM +BOM
Field-effect transistor TGF2979-SM for radio frequency power amplification
QFN-20-
Manufacturer:
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Mfr.Part #:
TGF2979-SM
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Datasheet:
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Shipping Restrictions:
This product may require additional documentation to export from the United States.
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Transistor Type:
HEMT
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Technology:
GaN SiC
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Operating Frequency:
DC to 12 GHz
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EDA/CAD Models:
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for TGF2979-SM, guaranteed quotes back within 12hr.
Availability: 8289 PCS
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Key Features
- Frequency: DC to 3.5 GHz
- Output Power (P3dB): 107 W at 3.5 GHz
- Linear Gain:> 14 dB at 3.5 GHz
- Typical PAE:> 50% at 3.5 GHz
- Operating Voltage: 28 V
- Low thermal resistance package
Specifications
Product Category | RF JFET Transistors | Shipping Restrictions | This product may require additional documentation to export from the United States. |
Transistor Type | HEMT | Technology | GaN SiC |
Operating Frequency | DC to 12 GHz | Gain | 11 dB |
Transistor Polarity | N-Channel | Vds - Drain-Source Breakdown Voltage | 32 V |
Vgs - Gate-Source Breakdown Voltage | - 2.7 V | Id - Continuous Drain Current | 1.8 A |
Output Power | 22 W | Maximum Operating Temperature | + 225 C |
Pd - Power Dissipation | 49 W | Mounting Style | SMD/SMT |
Configuration | Single | Development Kit | TGF2979-SMEVB1 |
Height | 0.203 mm | Length | 4 mm |
Moisture Sensitive | Yes | Number of Channels | 1 Channel |
Product | RF JFET Transistors | Product Type | RF JFET Transistors |
Series | TGF2979 | Factory Pack Quantity | 50 |
Subcategory | Transistors | Type | GaN SiC HEMT |
Width | 3 mm | Part # Aliases | TGF2979 1127378 |
Unit Weight | 0.004339 oz |
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[email protected]Shipping Method
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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In Stock: 8,289
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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1+ | - | - |
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