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TL032IDR +BOM

JFET input stage provides low noise and high gain bandwid

TL032IDR General Description

The TL032IDR is a go-to choice for engineers looking for a high-quality operational amplifier that strikes a balance between performance, efficiency, and reliability. Its small outline package facilitates space-saving designs without compromising on functionality, while its high slew rate and bandwidth support demanding applications such as audio amplification and instrumentation. Whether you are designing a precision circuit for sensor applications or crafting an active filter for signal conditioning, the TL032IDR provides the performance and features you need for success

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Key Features

  • Improved Audio Signal-to-Noise Ratio
  • Faster Data Transfer Rates Without Heat Generation
  • Simplified PCB Layout for Reduced Design Time
  • Enhanced Reliability and Durability Against Environmental Stressors
  • Increased Power Efficiency Through Advanced Power Management
  • Reduced Component Count for Smaller, Lighter Devices
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Specifications

Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 30
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 10 Rail-to-rail In to V+
GBW (typ) (MHz) 1.1 Slew rate (typ) (V/µs) 2.9
Vos (offset voltage at 25°C) (max) (mV) 1.5 Iq per channel (typ) (mA) 0.217
Vn at 1 kHz (typ) (nV√Hz) 41 Rating Catalog
Operating temperature range (°C) -40 to 85, 0 to 70 Offset drift (typ) (µV/°C) 9.7
Input bias current (max) (pA) 200 CMRR (typ) (dB) 94
Iout (typ) (A) 0.008 Architecture FET
Input common mode headroom (to negative supply) (typ) (V) 1.1 Input common mode headroom (to positive supply) (typ) (V) 0.4
Output swing headroom (to negative supply) (typ) (V) 1.1 Output swing headroom (to positive supply) (typ) (V) -1

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