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TPM2323-60 +BOM

High-frequency amplifier device for precise control

  • Manufacturer:

    Toshiba

  • Mfr.Part #:

    TPM2323-60

  • Datasheet:

    TPM2323-60 Datasheet (PDF) pdf-icon

  • Technology:

    GaAs

  • Mounting Style:

    SMD/SMT

  • Configuration:

    Single

  • Vds - Drain-Source Breakdown Voltage:

    15 V

TPM2323-60 General Description

FEATURES■ HIGH POWER   P1dB=48.0dBm at 2.4GHz■ HIGH GAIN   G1dB=10.0dB at 2.4GHz■ PARTIALLY MATCHED TYPE■ HERMETICALLY SEALED PACKAGE

Key Features

  • HIGH POWER
  • P1dB=48.0dBm at 2.4GHz
  • HIGH GAIN
  • G1dB=10.0dB at 2.4GHz
  • PARTIALLY MATCHED TYPE
  • HERMETICALLY SEALED PACKAGE

Specifications

Product Category JFET Technology GaAs
Mounting Style SMD/SMT Configuration Single
Vds - Drain-Source Breakdown Voltage 15 V Vgs - Gate-Source Breakdown Voltage - 5 V
Id - Continuous Drain Current 26 A Series TPM2323-60
Product Type JFETs Subcategory Transistors
Type JFET

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