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See Technical Specifications

TPS2105DBVR +BOM

Enabled through an active high signal, the TPS2105DBVR provides seamless power switching between sources

Manufacturer:

Texas Instruments
Mfr.Part #:

TPS2105DBVR
Datasheet:

TPS2105DBVR Datasheet (PDF)
Number Of Input Channels:

2
IN1, IN2 Input Voltage (min) (V):

2.7
IN1, IN2 Input Voltage (max) (V):

5.5
IN1 RDS(on) (typ) (mΩ):

250
EDA/CAD Models:

Request Free CAD Models for TPS2105DBVR

TPS2105DBVR General Description

The TPS2105DBVR is a versatile power switch specifically designed for seamless power transitions in dual-input systems. With a combination of n-channel and p-channel MOSFETs, this device ensures uninterrupted output voltage when switching between two independent power supplies. The n-channel MOSFET (IN1) is utilized for higher current applications, while the p-channel MOSFET (IN2) is ideal for lower current standby modes, reducing quiescent current to just 0.75 uA. This design feature not only improves efficiency but also minimizes the demand on standby power supplies

Key Features

Sophisticated Algorithm
Multi-Task Capability
Real-Time Feedback
Optimized Performance

Specifications

Number of input channels	2	IN1, IN2 input voltage (min) (V)	2.7
IN1, IN2 input voltage (max) (V)	5.5	IN1 rDS(on) (typ) (mΩ)	250
IN2 rDS(on) (typ) (mΩ)	1300	IN1 output current (max) (A)	0.5
IN2 output current (max) (A)	0.1	Rating	Catalog
Quiescent current (Iq) (µA)	0.75	Operating temperature range (°C)	-40 to 85
FET	Internal	Imax (A)	0.5
Features	Inrush current control, Reverse current blocking	Device type	Power muxes
Function	Inrush current control, Reverse current blocking