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TTC012(Q) +BOM

Bipolar (BJT) Transistor NPN 375 V 2 A 1.1 W Through Hole PW-MOLD2

  • Manufacturer:

    Toshiba

  • Mfr.Part #:

    TTC012(Q)

  • Datasheet:

    TTC012(Q) Datasheet (PDF) pdf-icon

  • Mounting Style:

    Through Hole

  • Transistor Polarity:

    NPN

  • Configuration:

    Single

  • Collector- Emitter Voltage VCEO Max:

    375 V

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TTC012(Q) General Description

Bipolar (BJT) Transistor NPN 375 V 2 A 1.1 W Through Hole PW-MOLD2

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Toshiba Original Stock

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 375 V Collector- Base Voltage VCBO 800 V
Emitter- Base Voltage VEBO 8 V Collector-Emitter Saturation Voltage 500 mV
Maximum DC Collector Current 2 A Pd - Power Dissipation 1.1 W
Gain Bandwidth Product fT - Minimum Operating Temperature -
Maximum Operating Temperature + 150 C Series TTC012
DC Collector/Base Gain hfe Min 80 at 1 mA, 5 V DC Current Gain hFE Max 250 at 1 mA, 5 V
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 200
Subcategory Transistors Technology Si
Unit Weight 0.012699 oz

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