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Silicon Carbide FET with 650V and 27mΩ
D2PAK-3Manufacturer:
Mfr.Part #:
UF3C065030B3
Datasheet:
FET Type:
N-Channel
Drain To Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
65A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
12V
EDA/CAD Models:
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The UF3C065030B3 is a cutting-edge silicon carbide (SiC) FET power module, meticulously engineered for optimal performance in high-efficiency power conversion applications. With its innovative half-bridge configuration comprising three integrated SiC power transistors, this module facilitates efficient switching and significantly reduces switching losses. Its 650V rated voltage and continuous 30A current rating make it a versatile solution for various power electronics applications, including inverters, motor drives, and power supplies. Boasting a low on-resistance of 65mΩ, the UF3C065030B3 effectively minimizes conduction losses and enhances overall efficiency, ensuring cost-effective and sustainable operation
FET Type | N-Channel | Technology | - |
Drain to Source Voltage (Vdss) | 650 V | Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 12V | Rds On (Max) @ Id, Vgs | 35mOhm @ 40A, 12V |
Vgs(th) (Max) @ Id | 6V @ 10mA | Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 15 V |
Vgs (Max) | ±25V | Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
FET Feature | - | Power Dissipation (Max) | 242W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
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