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See Technical Specifications

VP2450N8-G +BOM

MOSFET, P-Channel Enhancement-Mode, -500V, 30 Ohm.

Manufacturer:

MICROCHIP
Mfr.Part #:

VP2450N8-G
Datasheet:

VP2450N8-G Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
HTS Code:

8541.29.00.95
EDA/CAD Models:

Request Free CAD Models for VP2450N8-G

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

VP2450N8-G General Description

The VP2450N8-G is a cutting-edge product designed to revolutionize the world of transistors. With its low threshold and enhancement-mode features, this transistor offers power handling capabilities like never before. Its silicon-gate manufacturing process ensures top-notch quality and reliability in performance. The vertical DMOS structure sets it apart, providing high input impedance and positive temperature coefficient. Say goodbye to thermal runaway and secondary breakdown issues with this innovative device

Key Features

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
High input impedance and high gain
Excellent thermal stability
Integral source-to-drain diode

Application

► Motor controls
► Converters
► Amplifiers
► Switches
► Power supply circuits
► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)

Specifications

Source Content uid	VP2450N8-G	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
HTS Code	8541.29.00.95	Factory Lead Time	52 Weeks
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	500 V	Drain Current-Max (ID)	0.16 A
Drain-source On Resistance-Max	30 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	20 pF	JEDEC-95 Code	TO-243AA
JESD-30 Code	R-PSSO-F3	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	P-CHANNEL
Power Dissipation-Max (Abs)	1.6 W	Pulsed Drain Current-Max (IDM)	0.8 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	FLAT
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	40
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Turn-off Time-Max (toff)	70 ns	Turn-on Time-Max (ton)	35 ns