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See Technical Specifications

VQ1001P +BOM

MOSFET QD 30V 0.53A

Manufacturer:

VISHAY SILICONIX
Mfr.Part #:

VQ1001P
Datasheet:

VQ1001P Datasheet (PDF)
Part Life Cycle Code:

Obsolete
Pin Count:

14
ECCN Code:

EAR99
Additional Feature:

LOGIC LEVEL COMPATIBLE
EDA/CAD Models:

Request Free CAD Models for VQ1001P

VQ1001P General Description

Boasting a drain-source breakdown voltage of 30V and a gate-source voltage of 2.5V, the VQ1001P MOSFET is a reliable component with a continuous drain current of 3A and an on resistance of 1ohm. The 14-pin package offers easy integration into electronic circuits, though it is important to note that this MOSFET is not RoHS compliant

Key Features

Low On-Resistance: 0.85 Ω
Low Threshold: 1.4 V
Low Input Capacitance: 38 pF
Fast Switching Speed: 9 ns
Low Input and Output Leakage
BENEFITS
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage

Specifications

Part Life Cycle Code	Obsolete	Pin Count	14
Reach Compliance Code		ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE	Configuration	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30 V	Drain Current-Max (ID)	0.83 A
Drain-source On Resistance-Max	1 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	35 pF	JESD-30 Code	R-CDIP-T14
Number of Elements	4	Number of Terminals	14
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	3 A
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Form	THROUGH-HOLE	Terminal Position	DUAL
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Turn-off Time-Max (toff)	30 ns	Turn-on Time-Max (ton)	30 ns