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W989D6DBGX6I +BOM

High-speed synchronous DRAM module boasting s cycle time, M x -bit bandwidth, and low-power CMOS desig

W989D6DBGX6I General Description

SDRAM - Mobile LPSDR Memory IC 512Mbit Parallel 166 MHz 5 ns 54-VFBGA (8x9)

Key Features

  • 2.7V − 3.6V power supply
  • 1048576 words × 4 banks × 16 bits organization
  • Self refresh current: Standard and low power
  • CAS latency: 2 and 3
  • Burst Length: 1, 2, 4, 8, and full page
  • Sequential and Interleave burst
  • Burst read, single write operation
  • Byte data controlled by DQM
  • Power-down Mode
  • Auto-precharge and controlled precharge
  • 4K refresh cycles/ 64 mS
  • Interface: LVTTL
  • Packaged in BGA 60 balls pitch = 0.65 mm, using PB free materials

Specifications

Pbfree Code Yes Part Life Cycle Code Active
Reach Compliance Code compliant ECCN Code EAR99
HTS Code 8542.32.00.28 Access Mode FOUR BANK PAGE BURST
Access Time-Max 5 ns Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B54 Length 9 mm
Memory Density 536870912 bit Memory IC Type SYNCHRONOUS DRAM
Memory Width 16 Number of Functions 1
Number of Ports 1 Number of Terminals 54
Number of Words 33554432 words Number of Words Code 32000000
Operating Mode SYNCHRONOUS Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C Organization 32MX16
Peak Reflow Temperature (Cel) NOT SPECIFIED Seated Height-Max 1.025 mm
Self Refresh YES Supply Voltage-Max (Vsup) 1.95 V
Supply Voltage-Min (Vsup) 1.7 V Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES Technology CMOS
Temperature Grade INDUSTRIAL Terminal Form BALL
Terminal Pitch 0.8 mm Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Width 8 mm

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In Stock: 7,072

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Qty. Unit Price Ext. Price
1+ $4.748 $4.75
312+ $1.838 $573.46
624+ $1.773 $1,106.35
936+ $1.742 $1,630.51

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