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ZVN4206A +BOM

High Voltage N-type Transistor

Manufacturer:

Diodes Incorporated
Mfr.Part #:

ZVN4206A
Datasheet:

ZVN4206A Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

60 V
Current - Continuous Drain (Id) @ 25°C:

600mA (Ta)
EDA/CAD Models:

Request Free CAD Models for ZVN4206A

ZVN4206A General Description

Introducing the ZVN4206A N-Channel Enhancement Mode Vertical DMOS FET, a cutting-edge semiconductor device that offers superior performance in small signal applications. With a drain current capacity of 0.6A and a maximum voltage rating of 60V, this FET is designed to deliver high power handling capabilities with utmost efficiency. The single N-Channel design ensures optimal conduction properties, making it an ideal choice for use in various electronic circuits. Featuring a durable TO-92 package, this transistor is easy to install and guarantees long-lasting reliability in demanding environments. Whether you are designing amplifiers, switches, or other electronic systems, the ZVN4206A is a reliable and versatile component that will meet your expectations. Upgrade your circuit designs with this premium FET and experience enhanced performance and durability

Key Features

60 Volt VDS
RDS(on) = 1 Ω

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	Current - Continuous Drain (Id) @ 25°C	600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V	Rds On (Max) @ Id, Vgs	1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id	3V @ 1mA	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	100 pF @ 25 V	Power Dissipation (Max)	700mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Base Product Number	ZVN4206