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See Technical Specifications

ZVN4206G +BOM

Power Field-Effect Transistor, 1A I(D), 60V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN

Manufacturer:

Diodes Incorporated
Mfr.Part #:

ZVN4206G
Datasheet:

ZVN4206G Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

60 V
Current - Continuous Drain (Id) @ 25°C:

1A (Ta)
EDA/CAD Models:

Request Free CAD Models for ZVN4206G

ZVN4206G General Description

The ZVN4206G MOSFET transistor is designed for high-performance applications where reliability and efficiency are crucial. With a maximum voltage rating of 60V and low on-resistance, it can handle a wide range of voltage and current levels. The SOT-223 package and SMD termination make it easy to integrate into circuit board designs, saving space and simplifying assembly

Key Features

Compact geometry
Fast switching speeds
No secondary breakdown and Excellent temperature stability
High input impedance and low current drive
Ease of parralleling

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V	Rds On (Max) @ Id, Vgs	1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id	3V @ 1mA	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	100 pF @ 25 V	Power Dissipation (Max)	2W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	ZVN4206