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ZXM64N02X +BOM

MOSFET Discrete Semiconductor Products

ZXM64N02X General Description

N-Channel 20 V 5.4A (Ta) 1.1W (Ta) Surface Mount 8-MSOP

Key Features

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • Low profile SOIC package

Specifications

FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V Rds On (Max) @ Id, Vgs 40mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 16 nC @ 4.5 V
Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 15 V
Power Dissipation (Max) 1.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

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