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ZXMC10A816N8TC +BOM

Tape and reel packaged N/P-ch MOSFET transistor, rated for 100V and 2.1A/2.2A, encapsulated in an 8-pin SO format

Manufacturer:

Diodes Incorporated
Mfr.Part #:

ZXMC10A816N8TC
Datasheet:

ZXMC10A816N8TC Datasheet (PDF)
Technology:

MOSFET (Metal Oxide)
Configuration:

N and P-Channel
FET Feature:

Logic Level Gate
Drain To Source Voltage (Vdss):

100V

ZXMC10A816N8TC General Description

Built for efficiency and reliability, the ZXMC10A816N8TC offers high-speed performance and a compact 8-pin package, making it suitable for space-constrained applications. Its robust design and integrated protection features make it an ideal choice for applications such as DC-DC converters, motor drives, and Class D amplifiers where driving power MOSFETs is critical. With the ability to handle high frequencies and a wide input voltage range, this MOSFET driver provides flexibility and high performance in demanding environments

Specifications

Technology	MOSFET (Metal Oxide)	Configuration	N and P-Channel
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	2A	Rds On (Max) @ Id, Vgs	230mOhm @ 1A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	9.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	497pF @ 50V, 717pF @ 50V	Power - Max	1.8W
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	ZXMC10