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MOSFET Transistor Combination featuring N-Channel and P-Channel Variants, Designed for 100V Operations with Current Ratings of 1
SOT-223-8Manufacturer:
Diodes Incorporated
Mfr.Part #:
ZXMHC10A07T8TA
Datasheet:
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N and 2 P-Channel (Full Bridge)
Drain To Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
1A, 800mA
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Mosfet Array 100V 1A, 800mA 1.3W Surface Mount SM8
Technology | MOSFET (Metal Oxide) | Configuration | 2 N and 2 P-Channel (Full Bridge) |
Drain to Source Voltage (Vdss) | 100V | Current - Continuous Drain (Id) @ 25°C | 1A, 800mA |
Rds On (Max) @ Id, Vgs | 700mOhm @ 1.5A, 10V | Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 2.9nC @ 10V | Input Capacitance (Ciss) (Max) @ Vds | 138pF @ 60V, 141pF @ 50V |
Power - Max | 1.3W | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | ZXMHC10 |
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