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COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE, 1.3 W, RoHS
SOT223-8Manufacturer:
Mfr.Part #:
ZXMHC3A01T8TA
Datasheet:
REACH:
Details
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
N-Channel, P-Channel
EDA/CAD Models:
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The drain source voltage for this MOSFET is 30V, with an on resistance of 0.12ohm at a test voltage of 10V. This low on resistance helps to minimize power loss and improve overall efficiency. The power dissipation for this component is rated at 1.3W, ensuring that it can handle moderate power levels without overheating
Product Category | MOSFET | REACH | Details |
Technology | Si | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel, P-Channel | Number of Channels | 4 Channel |
Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 3.1 A, 2.3 A |
Rds On - Drain-Source Resistance | 180 mOhms, 330 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1 V, 3 V | Qg - Gate Charge | 3.9 nC, 2.6 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 1.3 W | Channel Mode | Enhancement |
Series | ZXMHC3A | Configuration | Quad |
Fall Time | 2.3 ns | Product | MOSFET Small Signals |
Product Type | MOSFET | Rise Time | 2.3 ns |
Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
Transistor Type | 2 N-Channel, 2 P-Channel | Type | Enhancement Mode Dual Channel |
Unit Weight | 0.002610 oz |
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