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ZXMN10A08DN8TA Image

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ZXMN10A08DN8TA +BOM

N-Channel Enhancement MOSFET, 100V, 2.1A, ZXMN10A08DN8TA

Manufacturer:

Diodes Incorporated
Mfr.Part #:

ZXMN10A08DN8TA
Datasheet:

ZXMN10A08DN8TA Datasheet (PDF)
Technology:

MOSFET (Metal Oxide)
Configuration:

2 N-Channel (Dual)
FET Feature:

Logic Level Gate
Drain To Source Voltage (Vdss):

100V

ZXMN10A08DN8TA General Description

Mosfet Array 100V 1.6A 1.25W Surface Mount 8-SO

Key Features

Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package

Application

SWITCHING

Specifications

Technology	MOSFET (Metal Oxide)	Configuration	2 N-Channel (Dual)
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	1.6A	Rds On (Max) @ Id, Vgs	250mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA (Min)	Gate Charge (Qg) (Max) @ Vgs	7.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	405pF @ 50V	Power - Max	1.25W
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	ZXMN10

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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In Stock: 9,925

Minimum Order: 1

Qty.	Unit Price	Ext. Price
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Tel: +852 95804164

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ZXMN10A08DN8TA

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Availability: 9,925 PCS

8-SOIC(0.154",3.90mmWidth)

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