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See Technical Specifications

ZXMN10A08GTA +BOM

N-Channel 100 V 0.25 Ohm Power MOSFET Surface Mount -SOT-223-3

Manufacturer:

Diodes Incorporated
Mfr.Part #:

ZXMN10A08GTA
Datasheet:

ZXMN10A08GTA Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
Current - Continuous Drain (Id) @ 25°C:

2A (Ta)
EDA/CAD Models:

Request Free CAD Models for ZXMN10A08GTA

ZXMN10A08GTA General Description

For those in need of a powerful and versatile N-channel transistor, the ZXMN10A08GTA from Diodes Inc. is an excellent choice. With a maximum drain-source voltage of 100V and a continuous drain current of 2A, this transistor is well-equipped to handle a variety of electronic applications. Its surface mount design and low Rds(On) test voltage of 10V make it easy to integrate into circuitry while offering efficient performance. The ZXMN10A08GTA boasts a maximum gate-source threshold voltage of 2V and a power dissipation of 2W, ensuring reliable operation in demanding conditions. However, it's important to note that this product is not RoHS compliant. With 4 pins, this transistor offers versatility and ease of installation

Key Features

Low on-resistance
Fast switching speed
Low threshold
SOT223 package

Application

SWITCHING

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V	Rds On (Max) @ Id, Vgs	250mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	7.7 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	405 pF @ 50 V
Power Dissipation (Max)	2W (Ta)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	ZXMN10