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100V N-channel UMOS MOSFET
SOT-223-3Manufacturer:
Diodes Incorporated
Mfr.Part #:
ZXMN10A11GTA
Datasheet:
REACH:
Details
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
N-Channel
EDA/CAD Models:
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The ZXMN10A11GTA is a robust 100V N-CHANNEL ENHANCEMENT MODE MOSFET Power Field-Effect Transistor with a maximum current rating of 2.4A I(D) and an on-state resistance of 0.35ohm. Its N-Channel design and Silicon, Metal-oxide Semiconductor FET construction make it a high-performance solution for power management, motor control, and other electronic applications where efficiency and reliability are essential. The transistor's 1-Element configuration ensures straightforward integration into various circuit designs, while its high voltage tolerance and low on-state resistance guarantee optimal performance in challenging environments
Product Category | MOSFET | REACH | Details |
Technology | Si | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 100 V | Id - Continuous Drain Current | 2.4 A |
Rds On - Drain-Source Resistance | 350 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 5.4 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 2 W | Channel Mode | Enhancement |
Series | ZXMN10A | Configuration | Single |
Fall Time | 3.5 ns | Forward Transconductance - Min | 4 S |
Height | 1.65 mm | Length | 6.7 mm |
Product Type | MOSFET | Rise Time | 1.7 ns |
Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 7.4 ns | Typical Turn-On Delay Time | 2.7 ns |
Width | 3.7 mm | Unit Weight | 0.003951 oz |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.367 | $0.37 |
10+ | $0.302 | $3.02 |
30+ | $0.274 | $8.22 |
100+ | $0.240 | $24.00 |
500+ | $0.225 | $112.50 |
1000+ | $0.215 | $215.00 |
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