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See Technical Specifications

ZXMN2A01FTA +BOM

SOT23 N-channel 20V 2.2A 120mOhm

Manufacturer:

Diodes Incorporated
Mfr.Part #:

ZXMN2A01FTA
Datasheet:

ZXMN2A01FTA Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for ZXMN2A01FTA

ZXMN2A01FTA General Description

20V N-CHANNEL ENHANCEMENT MODE MOSFET Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Key Features

LOW THRESHOLD

Application

SWITCHING

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	2.2 A	Rds On - Drain-Source Resistance	120 mOhms
Vgs - Gate-Source Voltage	- 12 V, + 12 V	Vgs th - Gate-Source Threshold Voltage	700 mV
Qg - Gate Charge	3 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	625 mW
Channel Mode	Enhancement	Series	ZXMN2A
Configuration	Single	Fall Time	4.62 ns
Forward Transconductance - Min	6.1 S	Height	1.02 mm
Length	3.04 mm	Product	MOSFET Small Signals
Product Type	MOSFET	Rise Time	5.21 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MOSFET
Typical Turn-Off Delay Time	7.47 ns	Typical Turn-On Delay Time	2.49 ns
Width	1.4 mm	Unit Weight	0.000282 oz