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ZXMP10A18GTA +BOM

The ZXMP10A18GTA is a P-Channel Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for power applications

ZXMP10A18GTA General Description

P-Channel 100 V 2.6A (Ta) 2W (Ta) Surface Mount SOT-223-3

Key Features

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • SOT223 package

Specifications

Product Category MOSFET REACH Details
Technology Si Mounting Style SMD/SMT
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 3.7 A
Rds On - Drain-Source Resistance 150 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 26.9 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 3.9 W Channel Mode Enhancement
Series ZXMP10A Configuration Single
Fall Time 17.9 ns Forward Transconductance - Min 6 S
Height 1.65 mm Length 6.7 mm
Product Type MOSFET Rise Time 6.8 ns
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 33.9 ns
Typical Turn-On Delay Time 4.6 ns Width 3.7 mm
Unit Weight 0.003951 oz

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