This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

ZXMP2120FFTA +BOM

Product ZXMP2120FFTA is a P-channel MOSFET with specifications of 200V voltage

Manufacturer:

Diodes Incorporated
Mfr.Part #:

ZXMP2120FFTA
Datasheet:

ZXMP2120FFTA Datasheet (PDF)
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

200 V
Current - Continuous Drain (Id) @ 25°C:

137mA (Ta)
EDA/CAD Models:

Request Free CAD Models for ZXMP2120FFTA

ZXMP2120FFTA General Description

Housed in a compact SOT-23 package, the ZXMP2120FFTA is designed for space-constrained environments without compromising on performance. Its wide junction temperature range of -55°C to 150°C guarantees reliable operation even in extreme conditions. Additionally, the transistor boasts a low gate charge of 4.8nC, enabling rapid and efficient switching for optimized performance

Key Features

Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package

Specifications

FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V	Current - Continuous Drain (Id) @ 25°C	137mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	28Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	100 pF @ 25 V	Power Dissipation (Max)	1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	ZXMP2120