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See Technical Specifications

ZXMP6A13GTA +BOM

60V P Channel MOSFET with 1.7A current rating

Manufacturer:

Diodes Incorporated
Mfr.Part #:

ZXMP6A13GTA
Datasheet:

ZXMP6A13GTA Datasheet (PDF)
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

60 V
Current - Continuous Drain (Id) @ 25°C:

1.7A (Ta)
EDA/CAD Models:

Request Free CAD Models for ZXMP6A13GTA

ZXMP6A13GTA General Description

Furthermore, the low on-resistance (RDS(on)) of just 30mΩ ensures minimal power losses and excellent efficiency in power switching circuits. By minimizing resistance, the MOSFET helps to improve overall system performance, reducing heat generation and maximizing energy efficiency

Specifications

FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	Current - Continuous Drain (Id) @ 25°C	1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	390mOhm @ 900mA, 10V
Vgs(th) (Max) @ Id	1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	5.9 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	219 pF @ 30 V
Power Dissipation (Max)	2W (Ta)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	ZXMP6A13