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ZXT12N50DXTA +BOM

MO-A package type with exceptional thermal managemen

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ZXT12N50DXTA General Description

Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 3A 132MHz 1.04W Surface Mount 8-MSOP

Specifications

Product Category Bipolar Transistors - BJT Mounting Style SMD/SMT
Transistor Polarity NPN Configuration Dual
Collector- Emitter Voltage VCEO Max 50 V Collector- Base Voltage VCBO 100 V
Emitter- Base Voltage VEBO 7.5 V Collector-Emitter Saturation Voltage 135 mV
Maximum DC Collector Current 3 A Pd - Power Dissipation 870 mW
Gain Bandwidth Product fT 132 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series ZXT12
Continuous Collector Current 3 A DC Collector/Base Gain hfe Min 250 at 10 mA, 2 V, 300 at 1 A, 2 V, 150 at 3 A, 2 V, 50 at 5 A, 2 V
DC Current Gain hFE Max 250 at 10 mA, 2 V Height 0.95 mm
Length 3.1 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 1000 Subcategory Transistors
Technology Si Width 3.1 mm
Unit Weight 0.004938 oz

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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