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ZXTN4004KTC +BOM

GREEN Plastic Package-3/2 for ZXTN4004KTC

ZXTN4004KTC General Description

Designed for general-purpose switching applications in power management circuits, the ZXTN4004KTC from Diodes Incorporated is a high-performance NPN silicon transistor. Its low on-state resistance and high current capability make it ideal for various power control tasks, particularly in low-voltage applications. With a maximum collector current (Ic) of 6A, this transistor can efficiently handle moderate to high power levels while minimizing power dissipation, thanks to its low saturation voltage. Housed in a compact SOT223 package, the ZXTN4004KTC offers enhanced thermal performance and ease of use in space-constrained designs. Additionally, it has built-in protection features such as thermal shutdown and overcurrent protection, enhancing its reliability in harsh operating conditions

Key Features

  • The ABC is a NPN medium power transistor designed for general-purpose amplifier and switching applications
  • It features a maximum collector current of 2
  • A, a collector-emitter voltage of 30V, and a low saturation voltage
  • The transistor comes in a DPAK package, making it suitable for surface mount applications requiring high power dissipation in a small footprint

Application

  • Portable electronics
  • Battery protection
  • Industrial applications

Specifications

Product Category Bipolar Transistors - BJT REACH Details
Mounting Style SMD/SMT Transistor Polarity NPN
Configuration Single Collector- Emitter Voltage VCEO Max 150 V
Collector- Base Voltage VCBO 150 V Emitter- Base Voltage VEBO 7 V
Collector-Emitter Saturation Voltage 250 mV Maximum DC Collector Current 1 A
Pd - Power Dissipation 3.8 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series ZXTN4004
Continuous Collector Current 1 A Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 2500 Subcategory Transistors
Technology Si Unit Weight 0.011640 oz

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