This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

ZXTP2014ZTA +BOM

Power Bipolar Transistor

Manufacturer:

Diodes Incorporated
Mfr.Part #:

ZXTP2014ZTA
Datasheet:

ZXTP2014ZTA Datasheet (PDF)
Transistor Type:

PNP
Current - Collector (Ic) (Max):

3 A
Voltage - Collector Emitter Breakdown (Max):

140 V
Vce Saturation (Max) @ Ib, Ic:

330mV @ 300mA, 3A
EDA/CAD Models:

Request Free CAD Models for ZXTP2014ZTA

ZXTP2014ZTA General Description

The ZXTP2014ZTA stands out as a high-performance PNP bipolar transistor designed for general-purpose switching and amplification applications. With a maximum power dissipation of 2.625W and a collector current rating of 1A, this transistor excels in high-speed switching and low saturation voltage requirements. Its high current gain (hFE) of up to 200 at a collector current of 500mA ensures exceptional amplification characteristics, while the low on-state saturation voltage of 0.55V at a collector current of 500mA minimizes power losses and improves efficiency in switching applications. Additionally, the device boasts a low thermal resistance of 140°C/W, allowing it to operate at high power levels without overheating. Encased in a reliable SOT-223 package, the ZXTP2014ZTA offers excellent thermal performance and effortless installation on printed circuit boards

Key Features

BVCEO> -140V
IC = -3A High Continuous Current
Low Saturation Voltage VCE(sat) <-75mV @ -0.5A
Rsat = 85mΩ for a Low Equivalent On-Resistance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen- and Antimony-Free. “Green” Device (Note 3)
For automotive applications requiring specific change
control (i.e. parts qualified to AEC-Q100/101/200, PPAP
capable, and manufactured in IATF 16949 certified facilities),
please contact us or your local Diodes representative.
https://www.diodes.com/quality/product-definitions/

Application

SWITCHING

Specifications

Transistor Type	PNP	Current - Collector (Ic) (Max)	3 A
Voltage - Collector Emitter Breakdown (Max)	140 V	Vce Saturation (Max) @ Ib, Ic	330mV @ 300mA, 3A
Current - Collector Cutoff (Max)	20nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1A, 5V
Power - Max	2.1 W	Frequency - Transition	120MHz
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	ZXTP2014