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ZXTP2025FTA +BOM

SOT-23 Packaged PNP Transistor with 1560mW power dissipation capability, ideal for general-purpose electronics design

ZXTP2025FTA General Description

Known for its rapid switching speed, the ZXTP2025FTA delivers a swift rise and fall time of 100ns, ensuring precise and efficient switching in any given application. Its high hFE value of 120 minimum at a collector current of 100mA guarantees unwavering and dependable performance

Specifications

Product Category Bipolar Transistors - BJT Mounting Style SMD/SMT
Transistor Polarity PNP Configuration Single
Collector- Emitter Voltage VCEO Max 50 V Collector- Base Voltage VCBO 50 V
Emitter- Base Voltage VEBO 7 V Collector-Emitter Saturation Voltage 150 mV
Maximum DC Collector Current 5 A Pd - Power Dissipation 1.56 W
Gain Bandwidth Product fT 190 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series ZXTP2025
DC Collector/Base Gain hfe Min 180 at 10 mA, 2 V, 200 at 500 mA, 2 V, 70 at 5 A, 2 V, 12 at 10 A, 2 V DC Current Gain hFE Max 180 at 10 mA, 2 V
Height 1 mm Length 3.05 mm
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 3000
Subcategory Transistors Technology Si
Width 1.4 mm Unit Weight 0.000282 oz

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