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2N2222

30V 500mW 100@150mA,10V 800mA NPN TO-18 Bipolar Transistors - BJT ROHS

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2N2222 General Description

Bipolar (BJT) Transistor NPN 30 V 600 mA 250MHz 500 mW Through Hole TO-18

Application

SWITCHING

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 30 V Collector- Base Voltage VCBO 60 V
Emitter- Base Voltage VEBO 6 V Maximum DC Collector Current 800 mA
Pd - Power Dissipation 1.8 W Gain Bandwidth Product fT 250 MHz
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 150 C
Series 2N2222 Continuous Collector Current 600 mA
DC Collector/Base Gain hfe Min 35 DC Current Gain hFE Max 300
Height 5.3 mm Length 5.8 mm
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 1
Subcategory Transistors Technology Si
Width 5.8 mm

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Availability: 7301 PCS

+BOM
Qty. Unit Price Ext. Price
1+ $1.548 $1.55
200+ $0.618 $123.60
500+ $0.597 $298.50
1000+ $0.587 $587.00

The prices below are for reference only.

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