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IRF1404

MOSFET MOSFET, 40V, 162A, 4 mOhm, 160 nC Qg, TO-220AB

Avaq Semiconductor offers the highly versatile and reliable IRF1404 driver, produced by IR. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the  IRF1404.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Part Life Cycle Code Transferred Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
Additional Feature ULTRA-LOW RESISTANCE, FAST SWITCHING, AVALANCHE RATED Avalanche Energy Rating (Eas) 620 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V Drain Current-Max (ID) 202 A
Drain-source On Resistance-Max 0.004 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB JESD-30 Code R-PSFM-T3
JESD-609 Code e0 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200 W Pulsed Drain Current-Max (IDM) 808 A
Qualification Status Not Qualified Surface Mount NO
Terminal Finish TIN LEAD Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON Product Category MOSFET
Technology Si Mounting Style Through Hole
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V Id - Continuous Drain Current 162 A
Rds On - Drain-Source Resistance 4 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Qg - Gate Charge 160 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 333 W
Channel Mode Enhancement Fall Time 33 ns
Height 15.65 mm Length 10 mm
Product Type MOSFET Rise Time 190 ns
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 46 ns Typical Turn-On Delay Time 17 ns
Width 4.4 mm Unit Weight 0.068784 oz

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