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IRF1404
MOSFET MOSFET, 40V, 162A, 4 mOhm, 160 nC Qg, TO-220AB
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Manufacturer:
IR
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Mfr.Part #:
IRF1404
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Datasheet:
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Part Life Cycle Code:
Transferred
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Pin Count:
3
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Reach Compliance Code:
compliant
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ECCN Code:
EAR99
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EDA/CAD Models:
Availability: 4211 PCS
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Avaq Semiconductor offers the highly versatile and reliable IRF1404 driver, produced by IR. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.
To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the IRF1404.
Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.
Specifications
Part Life Cycle Code | Transferred | Pin Count | 3 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Additional Feature | ULTRA-LOW RESISTANCE, FAST SWITCHING, AVALANCHE RATED | Avalanche Energy Rating (Eas) | 620 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 40 V | Drain Current-Max (ID) | 202 A |
Drain-source On Resistance-Max | 0.004 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e0 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 175 °C | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 200 W | Pulsed Drain Current-Max (IDM) | 808 A |
Qualification Status | Not Qualified | Surface Mount | NO |
Terminal Finish | TIN LEAD | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Product Category | MOSFET |
Technology | Si | Mounting Style | Through Hole |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 40 V | Id - Continuous Drain Current | 162 A |
Rds On - Drain-Source Resistance | 4 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Qg - Gate Charge | 160 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 333 W |
Channel Mode | Enhancement | Fall Time | 33 ns |
Height | 15.65 mm | Length | 10 mm |
Product Type | MOSFET | Rise Time | 190 ns |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 46 ns | Typical Turn-On Delay Time | 17 ns |
Width | 4.4 mm | Unit Weight | 0.068784 oz |
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Availability: 4211 PCS
+BOMQty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for IRF1404, guaranteed quotes back within 12hr.