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See Technical Specifications

2N5089

25V 625mW 400@100uA,5V 50mA NPN TO-92(TO-226) Bipolar Transistors - BJT ROHS

Manufacturer:

Onsemi
Mfr.Part #:

2N5089
Datasheet:

2N5089 Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

25 V
EDA/CAD Models:

Request Free CAD Models for 2N5089

Email: [email protected]

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Tel: +852 95804164

2N5089 General Description

This NPN Bipolar transistor is designed for high gain, low noise general purpose amplifier applications. It is housed in a TO-92 package for medium power applications.

Key Features

Pb-Free Packages are Available*

Application

AMPLIFIER

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	25 V	Collector- Base Voltage VCBO	30 V
Emitter- Base Voltage VEBO	4.5 V	Maximum DC Collector Current	50 mA
Pd - Power Dissipation	625 mW	Gain Bandwidth Product fT	50 MHz
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 150 C
DC Collector/Base Gain hfe Min	400 at 100 uA, 5 V	Product Type	BJTs - Bipolar Transistors
Subcategory	Transistors	Technology	Si