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See Technical Specifications

A2I09VD015NR1

RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 575-960 MHz, 2 W Avg., 48 V

Manufacturer:

NXP Semiconductor
Mfr.Part #:

A2I09VD015NR1
Datasheet:

A2I09VD015NR1 Datasheet (PDF)
Frequency:

575MHz ~ 960MHz
Gain:

34dB
RF Type:

General Purpose
Voltage - Supply:

48V ~ 55V
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A2I09VD015NR1 General Description

The A2I09VD015N wideband integrated circuit is designed with on-chip matching that makes it usable from 575 to 960 MHz. This multi-stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.

Key Features

Airfast RF LDMOS Wideband Integrated Power Amplifier, 575-960 MHz, 2 W Avg., 48 V

Specifications

Category	RF and WirelessRF Amplifiers	Series	-
Frequency	575MHz ~ 960MHz	P1dB	-
Gain	34dB	Noise Figure	-
RF Type	General Purpose	Voltage - Supply	48V ~ 55V
Current - Supply	84mA	Test Frequency	920MHz
Mounting Type	Surface Mount	Base Product Number	A2I09
Product Category	RF Amplifier	Mounting Style	SMD/SMT
Type	Power Amplifiers	Technology	Si
Operating Frequency	575 MHz to 960 MHz	Operating Supply Voltage	48 V
Operating Supply Current	84 mA	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 150 C	Moisture Sensitive	Yes
Number of Channels	2 Channel	Product Type	RF Amplifier
Factory Pack Quantity	500	Subcategory	Wireless & RF Integrated Circuits
Part # Aliases	935363184528	Unit Weight	0.002116 oz