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CPC5602C +BOM

MOSFET MOSFET N-CHANNEL 350V

Manufacturer:

CLARE
Mfr.Part #:

CPC5602C
Datasheet:

CPC5602C Datasheet (PDF)
Description:

MOSFET MOSFET N-CHANNEL 350V
Datasheet:

DatasheetProduct Comments
Availability:

Not AvailableAlternative Packaging
Technology:

Si
EDA/CAD Models:

Request Free CAD Models for CPC5602C

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CPC5602C General Description

The CPC5602C is a N-channel depletion-mode FET utilizes IXYS Integrated Circuits Division's proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device. One of the primary applications is as a linear regulator/hook switch for the LITELINK™ family of data access arrangements (DAA) devices CPC5620A, CPC5621A and CPC5622A. It has a typical ON-resistance of 8R, a drain-to-source voltage of 350V. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown.

Key Features

Depletion-mode device offers low RDS (ON) at cold temperatures
High input impedance
Low input and output leakage
PC card (PCMCIA) compatible

Application

Power Management
Communications & Networking
Security

Specifications

Description	MOSFET MOSFET N-CHANNEL 350V	Datasheet	DatasheetProduct Comments
Availability	Not AvailableAlternative Packaging	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	350 V
Id - Continuous Drain Current	5 mA	Rds On - Drain-Source Resistance	14 Ohms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C	Pd - Power Dissipation	2.5 W
Channel Mode	Depletion	Tradename	Clare
Packaging	Reel, Cut Tape