This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

FDC653N +BOM

N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 35mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDC653N
Datasheet:

FDC653N Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDC653N

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FDC653N General Description

This N-Channel enhancement mode power field effect transistors is produced using a proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Key Features

5 A, 30 V
R_DS(ON) = 0.035 Ω @ V_GS = 10 V
R_DS(ON) = 0.055 Ω @ V_GS = 4.5 V
Proprietary SuperSOT^TM-6 package design using copper lead frame for superior thermal and electrical capabilities
High density cell design for extremely low R_DS(ON)
Exceptional on-resistance and maximum DC current capability

Application

This product is general usage and suitable for many different applications.

Specifications

Source Content uid	FDC653N	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	39 Weeks, 4 Days
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	5 A	Drain-source On Resistance-Max	0.055 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-G6
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	6
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	1.6 W	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON