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FQA9N90C +BOM

N-Channel 900 V 9A (Tc) 280W (Tc) Through Hole TO-3P

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N-Channel 900 V 9A (Tc) 280W (Tc) Through Hole TO-3P

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900 V	Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	1.4Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10 V
Vgs (Max)	±30V	Input Capacitance (Ciss) (Max) @ Vds	2730 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	280W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Product Category	MOSFET	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	900 V	Id - Continuous Drain Current	9 A
Rds On - Drain-Source Resistance	1.4 Ohms	Vgs - Gate-Source Voltage	- 30 V, + 30 V
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	280 W	Channel Mode	Enhancement
Configuration	Single	Fall Time	75 ns
Forward Transconductance - Min	9.2 S	Height	20.1 mm
Length	16.2 mm	Product Type	MOSFET
Rise Time	120 ns	Factory Pack Quantity	30
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	MOSFET	Typical Turn-Off Delay Time	100 ns
Typical Turn-On Delay Time	50 ns	Width	5 mm
Part # Aliases	FQA9N90C_NL	Unit Weight	0.162260 oz