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FQP19N20 +BOM

With its N-Channel QFET design, the FQP19N20 MOSFET handles voltages up to 200V

Manufacturer:

Onsemi
Mfr.Part #:

FQP19N20
Datasheet:

FQP19N20 Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
EDA/CAD Models:

Request Free CAD Models for FQP19N20

Email: [email protected]

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Tel: +852 95804164

FQP19N20 General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

19.4A, 200V, R_DS(on) = 150mΩ(Max.) @V_GS = 10 V, I_D = 9.7A
Low gate charge ( Typ. 31nC)
Low C_rss ( Typ. 30pF)
100% avalanche tested

Application

Other Audio & Video

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	200 V	Id - Continuous Drain Current	19.4 A
Rds On - Drain-Source Resistance	150 mOhms	Vgs - Gate-Source Voltage	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage	3 V	Qg - Gate Charge	40 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	140 W	Channel Mode	Enhancement
Tradename	QFET	Series	FQP19N20
Configuration	Single	Fall Time	80 ns
Forward Transconductance - Min	14.5 S	Height	16.3 mm
Length	10.67 mm	Product Type	MOSFET
Rise Time	190 ns	Factory Pack Quantity	1000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	MOSFET	Typical Turn-Off Delay Time	55 ns
Typical Turn-On Delay Time	20 ns	Width	4.7 mm
Part # Aliases	FQP19N20_NL	Unit Weight	0.068784 oz