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HGTG11N120CN +BOM

Insulated Gate Bipolar Transistor

Manufacturer:

Onsemi
Mfr.Part #:

HGTG11N120CN
Datasheet:

HGTG11N120CN Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.2 kV
EDA/CAD Models:

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HGTG11N120CN General Description

The HGTG11N120CN is a high voltage, high speed power IGBT (Insulated Gate Bipolar Transistor) designed for applications requiring high current handling and fast switching speeds. It is part of the Gen3 series of IGBTs from International Rectifier.This IGBT has a rated voltage of 1200V and a current rating of 38A, making it suitable for use in high power applications such as motor control, inverters, and power supplies. It features a low voltage drop and low on-state conduction losses, which helps to improve overall system efficiency.The HGTG11N120CN is designed with advanced trench gate technology, which allows for higher switching speeds and lower energy losses compared to traditional planar IGBT designs. This technology also helps to reduce electromagnetic interference and improve reliability.The IGBT is housed in a TO-247 package, which provides good thermal conductivity and allows for easy mounting on a heatsink for improved thermal performance. It also features built-in protection features such as overcurrent and overtemperature protection to ensure safe operation in demanding environments.

Key Features

1200V, 11A IGBT for high power applications
Low VCE(sat) for reduced power dissipation
High operating junction temperature up to 175°C
Integrated anti-parallel diode
Soft switching capability for improved efficiency
RoHS compliant
Low switching losses for higher frequency operation

Application

High power switching applications
Motor control
Renewable energy systems
Industrial automation
Grid-tied inverters
Uninterruptible power supplies (UPS)
Electric vehicle charging systems
Welding equipment
Solar inverters
Electric traction systems

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	1.2 kV	Collector-Emitter Saturation Voltage	2.1 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	43 A
Pd - Power Dissipation	298 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	HGTG11N120CN
Continuous Collector Current	55 A	Continuous Collector Current Ic Max	43 A
Gate-Emitter Leakage Current	+/- 250 nA	Height	20.82 mm
Length	15.87 mm	Product Type	IGBT Transistors
Factory Pack Quantity	150	Subcategory	IGBTs
Width	4.82 mm	Part # Aliases	HGTG11N120CN_NL
Unit Weight	0.225401 oz