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IKB30N65ES5ATMA1
IGBT Trench Field Stop 650 V 62 A 188 W Surface Mount PG-TO263-3
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Manufacturer:
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Mfr.Part #:
IKB30N65ES5ATMA1
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Datasheet:
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Series:
TrenchStop™ 5
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IGBT Type:
Trench Field Stop
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Voltage - Collector Emitter Breakdown (Max):
650 V
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Current - Collector (Ic) (Max):
62 A
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EDA/CAD Models:
Availability: 7236 PCS
Please fill in the short form below and we will provide you the quotation immediately.
IKB30N65ES5ATMA1 General Description
IGBT Trench Field Stop 650 V 62 A 188 W Surface Mount PG-TO263-3
Key Features
- Very low V
- CEsat
- c
- Soft current fall characteristics with no tail current
- Symmetrical, low voltage overshoot
- Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping
- Maximum junction temperature>
- Qualified according to JEDEC standards
- V
- CE(peak)
- Suitable for use with single turn-on / turn-off gate resistor
- No need for gate clamping components
- Gate drivers with Miller clamping not required
- Reduction in the EMI filtering needed
- Excellent for paralleling
Application
- Energy Storage Systems
- Industrial heating and welding
- Solutions for photovoltaic energy systems
- Uninterruptible Power Supplies (UPS)
Specifications
Category | Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs | Series | TrenchStop™ 5 |
IGBT Type | Trench Field Stop | Voltage - Collector Emitter Breakdown (Max) | 650 V |
Current - Collector (Ic) (Max) | 62 A | Current - Collector Pulsed (Icm) | 120 A |
Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 30A | Power - Max | 188 W |
Switching Energy | 560µJ (on), 320µJ (off) | Input Type | Standard |
Gate Charge | 70 nC | Td (on/off) @ 25°C | 17ns/124ns |
Test Condition | 400V, 30A, 13Ohm, 15V | Reverse Recovery Time (trr) | 75 ns |
Operating Temperature | -40°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | IKB30N65 | RHoS | yes |
PBFree | yes | HalogenFree | yes |
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | SMD/SMT | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 650 V | Collector-Emitter Saturation Voltage | 1.35 V |
Maximum Gate Emitter Voltage | - 20 V, 20 V | Continuous Collector Current at 25 C | 62 A |
Pd - Power Dissipation | 188 W | Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 175 C | Continuous Collector Current Ic Max | 62 A |
Gate-Emitter Leakage Current | 100 nA | Product Type | IGBT Transistors |
Factory Pack Quantity | 1000 | Subcategory | IGBTs |
Tradename | TRENCHSTOP | Part # Aliases | IKB30N65ES5 SP001502572 |
Unit Weight | 0.055019 oz |
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IKB30N65ES5ATMA1 Datasheet PDF
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Availability: 7236 PCS
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