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IPB180N04S302ATMA1

N-Channel 40 V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7-3

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IPB180N04S302ATMA1 General Description

N-Channel 40 V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7-3

Infineon Technologies Corporation Inventory

Key Features

  • N-channel - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green package (RoHS compliant)
  • Ultra low Rds(on)
  • 100% Avalanche tested
Infineon Technologies Corporation Original Stock

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Series OptiMOS™
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 230µA Gate Charge (Qg) (Max) @ Vgs 210 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 14300 pF @ 25 V
FET Feature - Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount
Base Product Number IPB180 RHoS yes
PBFree yes HalogenFree yes
Product Category MOSFET Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Qualification AEC-Q101 Configuration Single
Height 4.4 mm Length 10 mm
Product Type MOSFET Subcategory MOSFETs
Transistor Type 1 N-Channel Width 9.25 mm
Part # Aliases IPB180N04S3-02 SP000254821 Unit Weight 0.056438 oz

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IPB180N04S302ATMA1 Datasheet PDF

Preliminary Specification IPB180N04S302ATMA1 PDF Download

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