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IRF3205PBF

Infineon Technologies' IRF3205PBF is a N-channel HEXFET power MOSFET featuring a voltage rating of 55V and a current handling capability of 110A

Manufacturer:

Infineon
Mfr.Part #:

IRF3205PBF
Datasheet:

IRF3205PBF Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for IRF3205PBF

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IRF3205PBF General Description

IRF3205PBF is a power MOSFET transistor designed for use in a variety of high power applications. It features a continuous drain current of 110A and a maximum power dissipation of 200W. This makes it suitable for applications requiring high current and power handling capabilities, such as power supplies, motor control, and DC-DC converters.The IRF3205PBF has a low on-resistance of 8 mΩ, which helps minimize power losses and improve efficiency in high current applications. Its gate threshold voltage is typically 4V, making it compatible with a variety of drive circuits.This MOSFET transistor is housed in a TO-220 package, which provides good thermal conductivity and allows for easy mounting on a heat sink for improved thermal performance. It can operate over a wide temperature range of -55°C to 175°C, making it suitable for use in harsh environmental conditions.

Key Features

Advanced MOSFET technology
Low on-state resistance
High switching speed
Enhanced power dissipation
Enhanced avalanche capability
Improved diode recovery dv/dt
Designed for use in high power applications
RoHS compliant

Application

Power supplies
Motor control circuits
DC-DC converters
Power switching applications
Automotive systems
Lighting systems
Amplifiers
Battery management systems
Industrial control systems
Solar inverters

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	55 V
Id - Continuous Drain Current	110 A	Rds On - Drain-Source Resistance	8 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	97.3 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	150 W
Channel Mode	Enhancement	Configuration	Single
Height	15.65 mm	Length	10 mm
Product Type	MOSFET	Factory Pack Quantity	1000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Width	4.4 mm	Unit Weight	0.068784 oz