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IRF3710

IRF3710 - High-performance transistor for power applications

Manufacturer:

Infineon
Mfr.Part #:

IRF3710
Datasheet:

IRF3710 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for IRF3710

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IRF3710 General Description

The IRF3710 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage, high-speed switching applications. It is commonly used in power supplies, motor control, and other high-current electronic devices.The IRF3710 has a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 57A, making it suitable for a wide range of high-power applications. It has a low on-state resistance (Rds(on)) of 23mΩ, which helps to minimize power loss and improve efficiency in circuit designs.This MOSFET features a TO-220 package, which provides good thermal performance and allows for easy mounting and installation in various electronic devices. The IRF3710 also has a low gate charge (Qg) of 59nC, enabling fast switching speeds and improved overall performance in high-frequency applications.

Key Features

High power MOSFET
100V Drain-source voltage
57A Drain current
3.7mΩ On-resistance
Low Gate threshold voltage
Fast switching performance
Suitable for high power applications
TO-220 package

Application

Switching power supplies
Motor controls
DC-DC converters
High power audio amplifiers
Automotive applications
Industrial applications
Electronic ballasts

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	57 A	Rds On - Drain-Source Resistance	23 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	200 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	47 ns	Height	15.65 mm
Length	10 mm	Product Type	MOSFET
Rise Time	58 ns	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	45 ns
Typical Turn-On Delay Time	12 ns	Width	4.4 mm
Unit Weight	0.068784 oz