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IRL3803PBF

Single N-Channel 30 V 0.006 Ohm 140 nC HEXFET® Power Mosfet - TO-220-3

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

IRL3803PBF
Datasheet:

IRL3803PBF Datasheet (PDF)
Series:

HEXFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

30 V
EDA/CAD Models:

Request Free CAD Models for IRL3803PBF

Email: [email protected]

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Tel: +852 95804164

IRL3803PBF General Description

MOSFET, N, 30V, 120A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:140A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:480A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V

Infineon Technologies Corporation Inventory

Key Features

Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard through-hole power package
High-current rating
Increased ruggedness
Wide availability from distribution partners
Industry standard qualification
High performance in low frequency applications
Standard pin-out allows for drop-in replacement
High current capability

Infineon Technologies Corporation Original Stock

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	HEXFET®
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	Current - Continuous Drain (Id) @ 25°C	140A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	6mOhm @ 71A, 10V
Vgs(th) (Max) @ Id	1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	140 nC @ 4.5 V
Vgs (Max)	±16V	Input Capacitance (Ciss) (Max) @ Vds	5000 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole
Base Product Number	IRL3803	RHoS	yes
PBFree	yes	HalogenFree	yes
Product Category	MOSFET	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V	Id - Continuous Drain Current	120 A
Rds On - Drain-Source Resistance	9 mOhms	Vgs - Gate-Source Voltage	- 16 V, + 16 V
Vgs th - Gate-Source Threshold Voltage	1.8 V	Qg - Gate Charge	140 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	150 W	Channel Mode	Enhancement
Configuration	Single	Height	15.65 mm
Length	10 mm	Product Type	MOSFET
Factory Pack Quantity	1000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Width	4.4 mm
Unit Weight	0.068784 oz

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Ratings and Reviews

N**h 02/18/2024

Got more and less whole (bent legs not in the account). Packaging is frankly weak. Delivery is very long. It was like playing football.

M**l 06/21/2023

Everything corresponds to the description. Packed standard, the quantity is accurate, the tolerance of the capacity within the declared only in a smaller direction is 10-15%, the esr is very good = 0,01-0,05 ohms.Thank you seller!

N**h 07/29/2022

The goods came. Delivery is long, but came. Efficiency did not have time to check.

K**n 05/18/2022

Not tested yet, but arrive:) Thank You.