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See Technical Specifications

IRLR9343TRPBF +BOM

MOSFET 30V 1 P-CH HEXFET 105mOhms 31nC

Manufacturer:

INFINEON
Mfr.Part #:

IRLR9343TRPBF
Datasheet:

IRLR9343TRPBF Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Factory Lead Time:

52 Weeks
EDA/CAD Models:

Request Free CAD Models for IRLR9343TRPBF

Email: [email protected]

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Tel: +852 95804164

IRLR9343TRPBF General Description

Power Field-Effect Transistor, 20A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

Key Features

- Enhancement-mode
- Single-channel
- P-channel MOSFET
- Silicon technology
- Drain-source breakdown voltage of -20 V
- Gate-source voltage of 20 V
- Drain current of -20 A
- Fall-time of 9.5 ns
- Typical turn-off delay time of 21 ns
- Maximum operating temperature of +175 C

Specifications

Source Content uid	IRLR9343TRPBF	Part Life Cycle Code	Active
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Factory Lead Time	52 Weeks	Avalanche Energy Rating (Eas)	120 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	55 V	Drain Current-Max (ID)	20 A
Drain-source On Resistance-Max	0.105 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252AA	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	P-CHANNEL	Pulsed Drain Current-Max (IDM)	60 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN OVER NICKEL	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	AMPLIFIER	Transistor Element Material	SILICON