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IXFH10N100P
N-Channel 1000 V 10A (Tc) 380W (Tc) Through Hole TO-247AD (IXFH)
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Manufacturer:
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Mfr.Part #:
IXFH10N100P
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Datasheet:
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Series:
HiPerFET™, Polar
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
1000 V
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EDA/CAD Models:
Availability: 6056 PCS
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IXFH10N100P General Description
Polar™ HiPerFETs (IXF) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability.
Key Features
- International Standard Packages
- Dynamic dv/dt Rating
- Avalanche Rated
- Fast Intrinsic Rectifier
- Low Q
- G
- and R
- DS(on)
- Low Drain-to-Tab Capacitance
- Low Package Inductance
- Advantages:
- Easy to Mount
- Space Savings
Application
- Switch-Mode and Resonant-Mode Power Supplies
- DC-DC Converters
- Battery Chargers
- Uninterrupted Power Supplies
- AC Motor Drives
Specifications
Series | HiPerFET™, Polar | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 1000 V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.4Ohm @ 5A, 10V | Vgs(th) (Max) @ Id | 6.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V | Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 3030 pF @ 25 V | Power Dissipation (Max) | 380W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Base Product Number | IXFH10 |
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Availability: 6056 PCS
+BOMQty. | Unit Price | Ext. Price |
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