This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

IXTK120N25P +BOM

High-current N-Channel MOSFET with 250 Volt Maximum Voltage and TO-264AA Configuration

Manufacturer:

Ixys
Mfr.Part #:

IXTK120N25P
Datasheet:

IXTK120N25P Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for IXTK120N25P

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IXTK120N25P General Description

The IXTK120N25P is a high-power MOSFET transistor designed for use in high-performance applications. It is a N-Channel enhancement mode power MOSFET with a drain-source voltage (VDS) rating of 250V and continuous drain current (ID) of 120A. This makes it suitable for high-power applications in industries such as power supplies, motor control, and automotive systems.The transistor has a low on-resistance (RDS(on)) of 0.057 ohms, allowing for efficient power dissipation and minimal thermal resistance. This results in reduced power losses and improved efficiency in high-current applications.The IXTK120N25P features a TO-264 package, which provides good thermal conduction and high-power dissipation capabilities. It also has a wide operating temperature range of -55°C to 175°C, making it suitable for use in a variety of environmental conditions.

Key Features

High voltage, high-speed switching capability

Low on-resistance

Low gate charge

Fast switching speed

Suitable for use in power conversion applications

TO-264 package for easy mounting

Can handle currents up to 120A

Voltage rating of 250V

Suitable for high power applications

Application

The IXTK120N25P is a power MOSFET transistor suitable for high-power applications such as inverters, industrial motor control, power supplies, and welding equipment

Its high voltage and current handling capabilities make it ideal for applications where high efficiency and reliability are required

The transistor can also be used in electronic ballasts, UPS systems, and battery chargers

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	250 V
Id - Continuous Drain Current	120 A	Rds On - Drain-Source Resistance	24 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	5 V
Qg - Gate Charge	185 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	700 W
Channel Mode	Enhancement	Tradename	PolarHT
Series	IXTK120N25	Configuration	Single
Fall Time	33 ns	Forward Transconductance - Min	50 S
Height	26.16 mm	Length	19.96 mm
Product Type	MOSFET	Rise Time	33 ns
Factory Pack Quantity	25	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	PolarHT Power MOSFET
Typical Turn-Off Delay Time	130 ns	Typical Turn-On Delay Time	30 ns
Width	5.13 mm	Unit Weight	0.352740 oz