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See Technical Specifications

IXTM21N50 +BOM

MOSFET 21 Amps 500V 0.23 Rds

Manufacturer:

IXYS
Mfr.Part #:

IXTM21N50
Datasheet:

IXTM21N50 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Pin Count:

2
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for IXTM21N50

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IXTM21N50 General Description

The High Voltage series of N-Channel Standard MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, and current regulators.

Key Features

International standard packages
Fast switching times
Avalanche rated
Rugged Polysilicon Gate Cell structure
Ultra-low R
DS(on)

Application

Capacitor discharge circuits
High voltage power supplies
Pulse circuits
Level shifting
Solid State Relays
Triggers
Advantages:
Easy to mount
Space savings
High power density

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Obsolete
Pin Count	2	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8541.29.00.95
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	500 V	Drain Current-Max (ID)	21 A
Drain-source On Resistance-Max	0.25 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-204AE	JESD-30 Code	O-MBFM-P2
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	N-CHANNEL
Power Dissipation Ambient-Max	300 W	Power Dissipation-Max (Abs)	250 W
Pulsed Drain Current-Max (IDM)	84 A	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Form	PIN/PEG
Terminal Position	BOTTOM	Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	SWITCHING	Transistor Element Material	SILICON