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See Technical Specifications

MMBF170 +BOM

MOSFET N-Ch Enhance

Manufacturer:

Onsemi
Mfr.Part #:

MMBF170
Datasheet:

MMBF170 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for MMBF170

Email: [email protected]

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Tel: +852 95804164

MMBF170 General Description

This N-Channel enhancement mode field effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 500mA DC. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Key Features

High density cell design for low R_DS(ON)
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability

Application

This product is general usage and suitable for many different applications.

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	500 mA	Rds On - Drain-Source Resistance	5 Ohms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	800 mV
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	300 mW	Channel Mode	Enhancement
Series	MMBF170	Configuration	Single
Height	1.2 mm	Length	2.9 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MOSFET
Width	1.3 mm	Part # Aliases	MMBF170_NL
Unit Weight	0.000282 oz