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See Technical Specifications

MMBT6427LT1G

NPN Bipolar Darlington Transistor

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

MMBT6427LT1G
Datasheet:

MMBT6427LT1G Datasheet (PDF)
Transistor Type:

NPN - Darlington
Current - Collector (Ic) (Max):

500 mA
Voltage - Collector Emitter Breakdown (Max):

40 V
Vce Saturation (Max) @ Ib, Ic:

1.5V @ 500µA, 500mA
EDA/CAD Models:

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MMBT6427LT1G General Description

This NPN Bipolar Darlington Transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.

Key Features

Pb-Free Package is Available
S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors	Series	-
Transistor Type	NPN - Darlington	Current - Collector (Ic) (Max)	500 mA
Voltage - Collector Emitter Breakdown (Max)	40 V	Vce Saturation (Max) @ Ib, Ic	1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max)	1µA	DC Current Gain (hFE) (Min) @ Ic, Vce	20000 @ 100mA, 5V
Power - Max	225 mW	Frequency - Transition	-
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	MMBT6427	Product Category	Darlington Transistors
Configuration	Single	Transistor Polarity	NPN
Collector- Emitter Voltage VCEO Max	40 V	Emitter- Base Voltage VEBO	12 V
Collector- Base Voltage VCBO	40 V	Maximum DC Collector Current	500 mA
Maximum Collector Cut-off Current	50 nA	Pd - Power Dissipation	225 mW
Mounting Style	SMD/SMT	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Continuous Collector Current	500 mA
DC Collector/Base Gain hfe Min	10000	DC Current Gain hFE Max	100000
Height	0.94 mm	Length	2.9 mm
Product Type	Darlington Transistors	Factory Pack Quantity	3000
Subcategory	Transistors	Width	1.3 mm
Unit Weight	0.000282 oz