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See Technical Specifications

MUN5235T1G

NPN Bipolar Digital Transistor (BRT)

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

MUN5235T1G
Datasheet:

MUN5235T1G Datasheet (PDF)
Case Outline:

419-04
MSL Temp (°C):

260
Container Type:

REEL
Configuration:

Single
EDA/CAD Models:

Request Free CAD Models for MUN5235T1G

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MUN5235T1G General Description

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Key Features

Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

Application

Logic Switch
Automotive Infotainment & Clusters
Automotive Braking

Specifications

Status	Active	Case Outline	419-04
MSL Temp (°C)	260	Container Type	REEL
Product Category	Bipolar Transistors - Pre-Biased	Configuration	Single
Transistor Polarity	NPN	Typical Input Resistor	2.2 kOhms
Typical Resistor Ratio	0.047	Mounting Style	SMD/SMT
DC Collector/Base Gain hfe Min	80	Collector- Emitter Voltage VCEO Max	50 V
Continuous Collector Current	100 mA	Peak DC Collector Current	100 mA
Pd - Power Dissipation	202 mW	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	DTC123J
DC Current Gain hFE Max	80	Height	0.85 mm
Length	2.1 mm	Product Type	BJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity	3000	Subcategory	Transistors
Width	1.24 mm	Unit Weight	0.000219 oz