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See Technical Specifications

NVTFS6H854NWFTAG

N-Channel 80 V 9.5A (Ta), 44A (Tc) 3.2W (Ta), 68W (Tc) Surface Mount 8-WDFN (3.3x3.3)

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

NVTFS6H854NWFTAG
Datasheet:

NVTFS6H854NWFTAG Datasheet (PDF)
Case Outline:

511AB
MSL Temp (°C):

260
Container Type:

REEL
Technology:

Si
EDA/CAD Models:

Request Free CAD Models for NVTFS6H854NWFTAG

Email: [email protected]

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Tel: +852 95804164

NVTFS6H854NWFTAG General Description

Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

Key Features

Small Footprint (3.3 x 3.3 mm)
Low R_{DS (ON)}
Low Q_G and Capacitance
Wettable Flank Option
AEC−Q101 Qualified and PPAP Capable
RoHS Compliant

Application

Switching Power Supplies
Power Switches (High side driver, Low side driver, H-Bridges, etc)
48 V system

Specifications

Status	Active	Case Outline	511AB
MSL Temp (°C)	260	Container Type	REEL
Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	80 V
Id - Continuous Drain Current	48 A	Rds On - Drain-Source Resistance	14.5 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	13 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	68 W
Channel Mode	Enhancement	Qualification	AEC-Q101
Configuration	Single	Fall Time	6 ns
Forward Transconductance - Min	39.5 S	Product Type	MOSFET
Rise Time	22 ns	Factory Pack Quantity	1500
Subcategory	MOSFETs	Typical Turn-Off Delay Time	24 ns
Typical Turn-On Delay Time	11 ns	Unit Weight	0.001043 oz