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RJK005N03T146

N-Channel 30 V 500mA (Ta) 200mW (Ta) Surface Mount SMT3

Manufacturer:

Rohm Semiconductor
Mfr.Part #:

RJK005N03T146
Datasheet:

RJK005N03T146 Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

30 V
Current - Continuous Drain (Id) @ 25°C:

500mA (Ta)
EDA/CAD Models:

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RJK005N03T146 General Description

2.5V Drive Nch MOSFET: MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.

Key Features

1) Low On-resistance.
2) Low voltage drive (2.5V drive).

Application

SWITCHING

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	Current - Continuous Drain (Id) @ 25°C	500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V	Rds On (Max) @ Id, Vgs	580mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs	4 nC @ 4 V
Vgs (Max)	±12V	Input Capacitance (Ciss) (Max) @ Vds	60 pF @ 10 V
Power Dissipation (Max)	200mW (Ta)	Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	RJK005