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RSM002N06T2L +BOM

MOSFET Trans MOSFET N-CH 60V 0.25A

email Email: [email protected]
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tel Tel: +852 95804164

RSM002N06T2L General Description

N-Channel 60 V 250mA (Ta) 150mW (Ta) Surface Mount VMT3

Key Features

1) High speed switing.

2) Small package(VMT3).

3) Low voltage drive(2.5V drive).

Application

SWITCHING

Specifications

Pbfree Code Yes Part Life Cycle Code Active
Pin Count 3 Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 53 Weeks, 1 Day
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.25 A Drain-source On Resistance-Max 3.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PDSO-F3
JESD-609 Code e2 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.15 W Qualification Status Not Qualified
Surface Mount YES Terminal Finish Tin/Copper (Sn/Cu)
Terminal Form FLAT Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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In Stock: 4,676

Minimum Order: 1

Qty. Unit Price Ext. Price
5+ $0.087 $0.44
50+ $0.078 $3.90
150+ $0.073 $10.95
500+ $0.069 $34.50
2500+ $0.066 $165.00
5000+ $0.064 $320.00

The prices below are for reference only.

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